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Cadmium Arsenide Sputtering Target

ST0945 Cadmium Arsenide Sputtering Target, Cd3As2

Chemical FormulaCd3As2
Catalog No.ST0945
CAS Number12006-15-4
Purity99.9%, 99.95%, 99.99%, 99.995%, 99.999%
ShapeDiscs, Plates, Column Targets, Step Targets, Custom-made

Cadmium Arsenide sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

Introduction

Cadmium Arsenide Sputtering Target (Cd₃As₂) is a specialized compound semiconductor material widely used in advanced condensed-matter physics and next-generation electronic research. As a prototypical three-dimensional Dirac semimetal, Cd₃As₂ exhibits ultra-high carrier mobility, linear energy dispersion, and unique quantum transport behavior. High-quality sputtering targets enable controlled thin-film deposition of Cd₃As₂ for both fundamental studies and emerging device concepts.

Detailed Description

Cd₃As₂ sputtering targets are manufactured from high-purity cadmium and arsenic precursors with precise stoichiometric control to ensure the correct Cd:As ratio. Advanced synthesis and ceramic consolidation processes—including controlled atmosphere processing, pressing, and densification—are used to achieve high density, uniform microstructure, and stable sputtering behavior.

Using a compound Cd₃As₂ target allows direct deposition of cadmium arsenide films without relying on complex co-sputtering or reactive gas balancing. This improves compositional consistency, reduces process variability, and enhances repeatability across deposition runs. Due to its semiconducting nature, Cd₃As₂ targets are typically operated under RF sputtering, providing stable plasma coupling and uniform erosion.

Thin films deposited from Cd₃As₂ sputtering targets are suitable for subsequent crystallization or epitaxial optimization through post-deposition annealing, depending on substrate selection and research objectives.

Applications

Cadmium Arsenide sputtering targets are primarily used in:

  • Topological materials research: Dirac and Weyl semimetal thin films

  • Quantum transport studies: High-mobility electronic systems

  • Advanced semiconductor research: Novel electronic and optoelectronic devices

  • Infrared and terahertz technologies: Functional semimetal films

  • Spintronics & quantum materials: Exploration of exotic electronic states

  • Academic & national laboratory R&D: Fundamental physics and materials science

Technical Parameters

ParameterTypical Value / RangeImportance
Chemical CompositionCd₃As₂Defines Dirac semimetal behavior
Purity99.9% – 99.99%Reduces impurity-induced scattering
StoichiometryCd:As ≈ 3:2Ensures correct electronic structure
Diameter25 – 150 mm (custom)Compatible with standard sputtering cathodes
Thickness3 – 6 mm (typical)Influences target lifetime
Density≥ 95% of theoreticalSupports stable sputtering
Sputtering ModeRF sputteringSuitable for compound semiconductors
BondingIndium / Elastomer / DirectImproves thermal stability

Comparison with Related Semiconductor Targets

MaterialKey AdvantageTypical Application
Cd₃As₂3D Dirac semimetal, ultra-high mobilityQuantum & topological research
CdTeDirect bandgap semiconductorInfrared & photovoltaic devices
HgCdTeTunable bandgapIR detectors
Bi₂Se₃Topological insulatorSurface-state electronics

FAQ

QuestionAnswer
Can Cd₃As₂ sputtering targets be customized?Yes, size, purity, density, and bonding can be tailored.
Which sputtering method is recommended?RF sputtering is generally preferred for Cd₃As₂.
Are there safety considerations?Yes, cadmium and arsenic compounds are handled under strict safety and compliance protocols.
How are the targets packaged?Vacuum-sealed with protective cushioning for safe transport and storage.

Packaging

Our Cadmium Arsenide Sputtering Targets (Cd₃As₂) are meticulously tagged and labeled to ensure traceability and strict quality control. Each target is vacuum-sealed and protected with reinforced cushioning to prevent contamination, oxidation, or mechanical damage during storage and transportation.

Conclusion

Cadmium Arsenide Sputtering Target (Cd₃As₂) provides a reliable platform for depositing high-quality Dirac semimetal thin films with controlled composition and reproducible performance. With precise stoichiometric control, stable sputtering behavior, and flexible customization options, Cd₃As₂ targets are ideally suited for advanced quantum materials research and emerging electronic applications.

For detailed specifications and a quotation, please contact us at sales@thinfilmmaterials.com.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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