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Cadmium Arsenide Sputtering Target

ST0945 Cadmium Arsenide Sputtering Target, Cd3As2

Chemical FormulaCd3As2
Catalog No.ST0945
CAS Number12006-15-4
Purity99.9%, 99.95%, 99.99%, 99.995%, 99.999%
ShapeDiscs, Plates, Column Targets, Step Targets, Custom-made

Cadmium Arsenide sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

MSDS File

Cadmium Arsenide Sputtering Target Description

Cadmium Arsenide Sputtering Targets are crafted from high-purity Cadmium Arsenide (Cd₃As₂), offering a range of purity grades and morphological sizes to meet diverse research and production requirements. These targets are suitable for use in Chemical Vapor Deposition (CVD) and Physical Vapor Deposition (PVD) processes, enabling the production of uniform and extremely thin films.

Cadmium Arsenide (Cd₃As₂) is noted for its unique properties, which open up various application scenarios:

  • Semiconducting Properties: Cd₃As₂ is utilized in the fabrication of semiconductor devices due to its effective semiconducting characteristics.
  • Topological Insulators: Cd₃As₂ is considered a three-dimensional topological insulator. Its topological properties hold significant potential for applications in topological insulator materials.
  • Magnetism: The crystal structure of Cd₃As₂ may exhibit antimagnetic properties, making it relevant in the study of magnetic materials and their potential applications.

Our Cadmium Arsenide Sputtering Targets are produced under strict quality assurance protocols to ensure the highest standards of performance and reliability for various technological applications.

Related Product: Cadmium Sputtering Target, Cadmium Fluoride Sputtering Target

Cadmium Arsenide Sputtering Target Specifications

Compound FormulaCd3As2
Molecular Weight487.08
AppearanceGrey Target
Melting Point716℃
Density3.031 g/cm3
Available SizesDia.: 1.0″, 2.0″, 3.0″, 4.0″, 5.0″, 6.0″

Thick: 0.125″, 0.250″

Cadmium Arsenide Sputtering Target Handling Notes

Indium bonding is recommended for Cadmium Arsenide (Cd₃As₂) Sputtering Targets due to the material’s inherent characteristics that can pose challenges during sputtering. Cadmium Arsenide is known for its brittleness and low thermal conductivity, which can make it susceptible to thermal shock.

Indium bonding helps to mitigate these issues by providing a more resilient attachment between the target and the backing plate, thus improving the overall stability and performance of the sputtering process. This bonding technique is particularly valuable in ensuring the reliable operation of the target in high-energy environments typical of sputtering applications.

Cadmium Arsenide Sputtering Target Application

Cadmium Arsenide (Cd₃As₂) Sputtering Targets offer diverse applications due to their unique properties:

  • Thin Film Deposition: Utilized in Physical Vapor Deposition (PVD) and Chemical Vapor Deposition (CVD) processes, Cadmium Arsenide Sputtering Targets facilitate the generation of thin films for various semiconductor devices. The sputtering process involves placing the target in a vacuum chamber and bombarding it with high-energy ions or electrons to deposit uniform thin films on substrates.
  • Semiconductor Device Fabrication: The thin films produced from Cadmium Arsenide can be used in the creation of semiconductor devices such as thin-film transistors, photodiodes, and other electronic and optoelectronic components. These films are critical in advancing semiconductor technology and device performance.
  • Magnetic Material Research: Cadmium Arsenide’s potential to exhibit antiferromagnetic properties due to its crystal structure makes it valuable for research into magnetic materials. Sputter-deposited films can be explored for applications in magnetic materials and related research areas.

These capabilities underscore the versatility and importance of Cadmium Arsenide Sputtering Targets in both technological and research domains.

Cadmium Arsenide Sputtering Target Packaging

Our Cadmium Arsenide Sputtering Target is meticulously handled during storage and transportation to ensure that it retains its original quality and performance.

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TFM offers Cadmium Arsenide Sputtering Targets in various forms, purities, sizes, and prices. We specialize in high-purity thin film deposition materials with optimal density and minimal grain sizes, which are ideal for semiconductor, CVD, and PVD applications in display and optics. Contact Us for current pricing on sputtering targets and other deposition materials that are not listed.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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