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ST0260 Chromium Silicide Sputtering Target, CrSi2

Chemical Formula: CrSi2
Catalog Number: ST0260
CAS Number: 12018-09-6
Purity: >99.5%
Shape: Discs, Plates, Column Targets, Step Targets, Custom-made

Chromium Silicide sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

MSDS File

Chromium Silicide Sputtering Target Description

Our chromium silicide sputtering target is a high-performance ceramic target composed of chromium and silicon. Designed for precision sputtering applications, this target is ideal for thin film deposition processes in semiconductor, display, and other advanced technology industries.

Chromium

Chromium is a chemical element derived from the Greek word chroma, meaning “color.” It was used as early as 1 AD and was discovered by the Terracotta Army. The canonical chemical symbol for chromium is Cr. Its atomic number is 24, and it is located in Period 4 and Group 6 of the periodic table, belonging to the d-block. The relative atomic mass of chromium is 51.9961(6) Dalton, with the number in brackets indicating the uncertainty.

Related Product: Chromium Sputtering Target

Silicon

Silicon is a chemical element derived from the Latin words silex or silicis, meaning “flint.” It was first mentioned in 1824 and observed by J. Berzelius, who also accomplished and announced its isolation. The canonical chemical symbol for silicon is Si. Its atomic number is 14, and it is located in Period 3 and Group 14 of the periodic table, belonging to the p-block. The relative atomic mass of silicon is 28.0855(3) Dalton, with the number in brackets indicating the uncertainty.

Chromium Silicide Sputtering Target Handling Notes

  • Bonding Recommendation for Chromium Silicide Sputtering TargetIndium bonding is recommended for chromium silicide sputtering targets due to the material’s characteristics that are not ideal for conventional sputtering methods. These characteristics include brittleness and low thermal conductivity, which can affect the target’s performance and longevity.
  • Thermal Properties of Chromium Silicide Sputtering TargetChromium silicide sputtering targets have low thermal conductivity and are susceptible to thermal shock. This means they can experience significant stress and potential damage when subjected to rapid temperature changes during sputtering processes.

Chromium Silicide Sputtering Target Application

The chromium silicide sputtering target is utilized in a range of applications, including:

  • Thin Film Deposition: For creating thin layers in various electronic and optical devices.
  • Decoration: In decorative coatings for aesthetic purposes.
  • Semiconductor: Essential in semiconductor fabrication for various components.
  • Display: Used in the production of display panels.
  • LED and Photovoltaic Devices: Applied in the manufacturing of LEDs and photovoltaic cells.
  • Functional Coating: For enhancing the properties of materials with functional coatings.
  • Optical Information Storage: In industries focused on optical data storage.
  • Glass Coating: For coating automotive glass, architectural glass, and other specialized glass products.
  • Optical Communication: In devices and systems used for optical communication.

Chromium Silicide Sputtering Target Packing

Our chromium silicide sputter targets are meticulously tagged and labeled externally to facilitate efficient identification and ensure rigorous quality control. We take great care to prevent any damage during storage and transportation, maintaining the highest standards for product integrity.

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TFM offers Chromium Silicide Sputtering Targets in various forms, purities, sizes, and prices. We specialize in high-purity thin film deposition materials with optimal density and minimal grain sizes, which are ideal for semiconductor, CVD, and PVD applications in display and optics. Contact Us for current pricing on sputtering targets and other deposition materials that are not listed.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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