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ST0304 CIGS Copper Indium Gallium Selenide Sputtering Target

Chemical Formula: CuIn1-xGaxSe2
Catalog Number: ST0304
CAS Number: 144972-86-1
Purity: 99.9%, 99.95%, 99.99%, 99.995%, 99.999%
Shape: Discs, Plates, Column Targets, Step Targets, Custom-made

Copper Indium Gallium Selenide sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

MSDS File

CIGS Copper Indium Gallium Selenide Sputtering Target Description

Copper indium gallium selenide

Copper Indium Gallium Selenide (CIGS) is a semiconductor material composed of copper, indium, gallium, and selenium. CIGS is characterized by its tetrahedrally bonded structure with a chalcopyrite crystal formation. CIGS sputtering targets are utilized in the production of solar thin-film batteries, which offer advantages such as low mass, extremely thin thickness, and flexibility. These properties make CIGS an ideal material for various advanced solar energy applications.

Copper

Copper is a chemical element with the symbol “Cu” and an atomic number of 29. The name “copper” originates from the Old English word ‘coper,’ which in turn is derived from the Latin term ‘Cyprium aes,’ meaning metal from Cyprus. Copper has been used since 9000 BC and was discovered by people from the Middle East. It is located in Period 4 and Group 11 of the periodic table, belonging to the d-block elements. The relative atomic mass of copper is approximately 63.546 Daltons, with the number in parentheses indicating a margin of uncertainty.

Related Product: Copper (Cu) Sputtering Target

Indium

Indium is a chemical element with the symbol “In” and an atomic number of 49. The name “indium” comes from the Latin word ‘indicium,’ meaning violet or indigo, referring to the indigo spectral line. It was first mentioned in 1863 and observed by Ferdinand Reich and Theodor Richter. The isolation of indium was later accomplished and announced by Theodor Richter. Indium is located in Period 5 and Group 13 of the periodic table, belonging to the p-block elements. Its relative atomic mass is approximately 114.818 Daltons, with the number in parentheses indicating a margin of uncertainty.

Related Product: Indium (In) Sputtering Target

Gallium

Gallium is a chemical element with the symbol “Ga” and an atomic number of 31. The name “gallium” originates from the Latin word ‘Gallia,’ meaning France. It was first mentioned in 1875 and observed by Paul-Émile Lecoq de Boisbaudran, who also accomplished and announced its isolation. Gallium is located in Period 4 and Group 13 of the periodic table, belonging to the p-block elements. Its relative atomic mass is approximately 69.723 Daltons, with the number in parentheses indicating a margin of uncertainty.

Selenium

Selenium is a chemical element with the symbol “Se” and an atomic number of 34. The name “selenium” is derived from the Greek word ‘selene,’ meaning moon. It was first mentioned in 1817 and observed by Jöns Jacob Berzelius and Johan Gottlieb Gahn, who also achieved and announced its isolation. Selenium is located in Period 4 and Group 16 of the periodic table, classified within the p-block elements. Its relative atomic mass is approximately 78.96 Daltons, with the number in parentheses indicating a margin of uncertainty.

Related Product: Selenium (Se) Sputtering Target

CIGS Copper Indium Gallium Selenide Sputtering Target Specification

Compound Formula CuInxGa(1-x)Se2
Appearance Silvery
Density 5.7 g/cm3
Melting Point 990-1070 °C
Available Sizes Dia.: 1.0″, 2.0″, 3.0″, 4.0″, 5.0″, 6.0″
Thick: 0.125″, 0.250″

CIGS Copper Indium Gallium Selenide Sputtering Target Application

The Copper Indium Gallium Selenide (CIGS) Sputtering Target is utilized in a variety of applications, including thin film deposition and decorative coatings. It is widely used in the semiconductor industry, display technologies, and the production of LEDs and photovoltaic devices. Additionally, this material is important for functional coatings, optical information storage, glass coating applications for automotive and architectural glass, and optical communication technologies.

CIGS Copper Indium Gallium Selenide Sputtering Target Packing

Our Copper Indium Gallium Selenide (CIGS) Sputtering Targets are meticulously tagged and labeled on the exterior to ensure efficient identification and maintain high quality control standards. We take extensive precautions to prevent any potential damage during storage and transportation, ensuring the targets arrive in perfect condition.

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TFM offers Copper Indium Gallium Selenide Sputtering Targets in various forms, purities, sizes, and prices. We specialize in high-purity thin film deposition materials with optimal density and minimal grain sizes, which are ideal for semiconductor, CVD, and PVD applications in display and optics. Contact Us for current pricing on sputtering targets and other deposition materials that are not listed.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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