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ST0970 Germanium Disulphide Sputtering Target, GeS2

Chemical FormulaGeS2
Catalog No.ST0970
CAS Number12025-34-2
Purity99.9%, 99.95%, 99.99%, 99.995%, 99.999%
ShapeDiscs, Plates, Column Targets, Step Targets, Custom-made

Germanium Disulphide sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

MSDS File

Germanium Disulphide Sputtering Target Description

TFM offers Germanium Disulphide Sputtering Targets, crafted from premium-grade materials to ensure superior performance and reliability in thin-film deposition. Our targets feature a unique Germanium and Disulphide composition, providing high electrical conductivity, a high melting point, and excellent chemical stability. These attributes make them ideal for applications in microelectronics, solar cells, and other advanced thin-film processes. TFM’s Germanium Disulphide Sputtering Targets meet the stringent requirements of both research and manufacturing professionals, supporting precise material control and high-quality results.

Related Product: Germanium Sputtering Target, Germanium Sulfide Sputtering Target

Germanium Disulphide Sputtering Target Specifications

Compound FormulaGeS2
Molecular Weight136.77
AppearanceWhite Target
Melting Point800 °C
Density2.94 g/cm3
Available SizesDia.: 1.0″, 2.0″, 3.0″, 4.0″, 5.0″, 6.0″

Thick: 0.125″, 0.250″

Germanium Disulphide Sputtering Target Handling Notes

Indium bonding is recommended for Germanium Disulphide Sputtering Targets due to the material’s brittleness and low thermal conductivity, which can pose challenges during sputtering. The use of indium bonding helps mitigate these issues, enhancing sputtering performance and extending the target’s lifespan. This material’s low thermal conductivity and susceptibility to thermal shock necessitate careful handling to maintain its integrity and performance.

Germanium Disulphide Sputtering Target Application

  • Microelectronics: Used in sputter coating for fabricating electronic devices and integrated circuits. The high thermal and electrical conductivity of the target material ensures performance and reliability in microelectronics.
  • Solar Cells: Applied in the preparation of thin film solar cells, where precise control of film thickness and composition enhances photovoltaic conversion efficiency.
  • Sensors and Detectors: Utilized to create photoelectric sensors and detectors due to their high photoconductive properties, enabling the detection of light, radiation, and other signals.
  • Optical Devices: Employed in the manufacture of optical films such as transmittance enhancement films, reflective films, and filters, which improve the performance of optical devices.
  • Composites and Ceramics: Integrated with other materials to produce composites and ceramics, achieving specific physical and chemical properties tailored for various applications.

Germanium Disulphide Sputtering Target Packaging

Our Germanium Disulphide Sputtering Target is meticulously handled throughout storage and transportation to ensure it arrives in pristine condition, maintaining the highest quality standards.

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TFM offers Germanium Disulphide Sputtering Targets in various forms, purities, sizes, and prices. We specialize in high-purity thin film deposition materials with optimal density and minimal grain sizes, which are ideal for semiconductor, CVD, and PVD applications in display and optics. Contact Us for current pricing on sputtering targets and other deposition materials that are not listed.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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