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ST0941 Nickel Antimonide Sputtering Target, NiSb

Chemical FormulaNiSb
Catalog No.ST0941
CAS Number12035-52-8
Purity99.9%, 99.95%, 99.99%, 99.995%, 99.999%
ShapeDiscs, Plates, Column Targets, Step Targets, Custom-made

Nickel Antimonide sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

MSDS File

Nickel Antimonide Sputtering Target Description

Nickel Antimonide Sputtering Target is a specialized material used in the sputtering process for thin film deposition. Nickel antimonide is a semiconductor material, and thin films of NiSb deposited using sputtering targets can be utilized in various semiconductor applications.

TFM specializes in creating Nickel Antimonide Sputtering Targets with optimal density and minimal average grain size. By employing advanced sputtering techniques, we deposit ultra-high purity thin films of metal or oxide materials onto solid substrates. The exceptional purity of our targets guarantees superior quality and performance of the resulting films.

Related Product: Nickel Silicide Sputtering Target, Nickel Oxide Sputtering Target

Nickel Antimonide Sputtering Target Specifications

Compound FormulaNiSb
Molecular Weight180.45
Appearancegray target
Melting Point1102℃
Density8.56 g/cm3
Available SizesDia.: 1.0″, 2.0″, 3.0″, 4.0″, 5.0″, 6.0″

Thick: 0.125″, 0.250″

Nickel Antimonide Sputtering Target Handling Notes

Indium bonding is recommended for Nickel Antimonide Sputtering Targets due to their characteristics that are not ideally suited for sputtering. Nickel antimonide has low thermal conductivity and is susceptible to thermal shock, making it prone to issues such as brittleness during the sputtering process. Using indium bonding helps mitigate these issues by improving thermal and mechanical stability, ensuring consistent performance and high-quality thin films.

Nickel Antimonide Sputtering Target Application

  • Nickel Antimonide Sputtering Targets are versatile materials with various applications:
    1. Semiconductor Devices: Essential for the fabrication of electronic components such as transistors and diodes, where their semiconductor properties are utilized.
    2. Thermoelectric Devices: Useful in devices that convert heat energy into electrical energy, making them valuable for energy harvesting and temperature control applications.
    3. Magnetic Devices: Nickel antimonide’s potential magnetic properties can be applied in magnetic devices or spintronics, contributing to advancements in magnetic storage and sensing technologies.
    4. Research and Development: Employed in R&D to explore new technologies and develop novel electronic devices, benefiting from its unique properties.
    5. Optoelectronics: Depending on the specific properties of the deposited films, NiSb may be used in optoelectronic devices such as photodetectors or LEDs, enhancing optical and electronic performance.

Nickel Antimonide Sputtering Target Packaging

Our Nickel Antimonide Sputtering Target is meticulously handled during storage and transportation to ensure that the quality of our products is maintained in their original condition.

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TFM offers Nickel Antimonide  Sputtering Targets in various forms, purities, sizes, and prices. We specialize in high-purity thin film deposition materials with optimal density and minimal grain sizes, which are ideal for semiconductor, CVD, and PVD applications in display and optics. Contact Us for current pricing on sputtering targets and other deposition materials that are not listed.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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