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ST0114 Titanium Aluminum Vanadium Sputtering Target, Ti/Al/V

Chemical Formula: Ti/Al/V
Catalog Number: ST0114
CAS Number: 7440-32-6 | 7429
Purity: 99.9%
Shape: Discs, Plates, Column Targets, Step Targets, Custom-made

Titanium Aluminum Vanadium sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

MSDS File

Titanium Aluminum Vanadium Sputter Target Description

Titanium aluminum vanadium sputtering target from Stanford Advanced Materials is an alloy sputtering material containing Ti, Al and V.

Titanium

Titanium, symbolized as “Ti,” is a chemical element named after the Titans, the sons of the Earth goddess in Greek mythology. It was first mentioned and observed by W. Gregor in 1791, with its isolation later accomplished and announced by J. Berzelius. Titanium has an atomic number of 22 and is located in Period 4, Group 4 of the d-block in the periodic table. Its relative atomic mass is 47.867(1) Daltons, with the number in brackets indicating the measurement uncertainty.

Related Product: Titanium (Ti) Sputtering Target

AluminumAluminium, also known as aluminum, is a chemical element whose name originates from the Latin word for alum, ‘alumen,’ meaning bitter salt. It was first mentioned and observed by H.C. Ørsted in 1825, who also accomplished its isolation. Represented by the symbol “Al,” aluminium has an atomic number of 13 and is located in Period 3, Group 13 of the p-block in the periodic table. Its relative atomic mass is 26.9815386(8) Daltons, with the number in brackets indicating the measurement uncertainty.

Related Product: Aluminum (Al) Sputtering Target

Vanadium

Vanadium, symbolized as “V,” is a chemical element named after Vanadis, an old Norse name for the Scandinavian goddess Freyja. It was first mentioned and observed by M. del Río in 1801, with its isolation later accomplished and announced by N.G. Sefström. Vanadium has an atomic number of 23 and is located in Period 4, Group 5 of the d-block in the periodic table. Its relative atomic mass is 50.9415(1) Daltons, with the number in brackets indicating the measurement uncertainty.

Related Product: Vanadium (V) Sputtering Target

Titanium Aluminum Vanadium Sputter Target Packing

Our Titanium Aluminum Vanadium Sputter Targets are meticulously tagged and labeled externally to ensure efficient identification and stringent quality control. We take great care to prevent any damage during storage and transportation, ensuring that our products arrive in perfect condition.

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TFM offers Titanium Aluminum Vanadium Sputtering Targets in various forms, purities, sizes, and prices. We specialize in high-purity thin film deposition materials with optimal density and minimal grain sizes, which are ideal for semiconductor, CVD, and PVD applications in display and optics. Contact Us for current pricing on sputtering targets and other deposition materials that are not listed.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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